 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM6060RPAPT CURRENT 30 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * N-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT (1) G D (3) 2 Source 3 Drain( Heat Sink ) S (2) Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM6060RPAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 60 V V 20 30 ID - Pulsed PD TJ TSTG (Note 3) A 120 50 -55 to 150 -55 to 150 W C C Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM6060RPAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 60 25 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS=10V, ID=24A VDS =10V, ID = 24A 2 4 25 20 V m S SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=48V, ID=30A VGS=10V V DD= 30V ID =30A , VGS = 10 V RGEN= 7.5 36 9 19 15 250 45 130 43 nC ton 20 300 60 150 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 24A , VGS = 0 V 0.9 30 1.3 A V |
Price & Availability of CHM6060RPAPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |